Our group studies the basic technological (growth, electrical properties) and spectroscopic (Raman, X-ray, luminescence) properties of van der Waals materials. We epitaxially produce high-quality, hexagonal boron nitride (h-BN) with a thickness ranging from monolayers to micrometers by MOVPE. The obtained h-BN, as a central element of our interests, allows us to study problems such as p-type doping, far ultraviolet emission and absorption and the fabrication of more complex large-area van der Waals heterostructures.